View RF3166_4514935.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2-491 product description ordering information typical applications features functional block diagram rf micro devices, inc. 7628 thorndike road greensboro, nc 27409, usa tel (336) 664 1233 fax (336) 664 0454 http://www.rfmd.com optimum technology matching? applied si bjt gaas mesfet gaas hbt si bi-cmos sige hbt si cmos ingap/hbt gan hemt sige bi-cmos 9 1 3 2 6 5 4 8 7 dcs/pcs rfin band select tx enable vbatt gnd vramp gsm rf in dcs/pcs rfout gsm rfout RF3166 quad-band gsm850/gsm900/dcs/pcs power amp module ? 3v quad-band gsm handsets ? commercial and consumer systems ? portable battery-powered equipment ? gsm850/egsm900/dcs/pcs products ? gprs class 12 ? power star tm module the RF3166 is a high-power, high-efficiency power ampli- fier module with integrated power control that provides over 50db of control range. the device is a self-contained 6mmx6mm module with 50 input and output terminals. the device is designed for use as the final rf amplifier in gsm850, egsm900, dcs and pcs handheld digital cel- lular equipment and other applications in the 824mhz to 849mhz, 880mhz to 915mhz, 1710mhz to 1785mhz and 1850mhz to 1910mhz bands. the RF3166 incorpo- rates rfmd?s latest v batt tracking circuit, which monitors battery voltage and prevents the power control loop from reaching saturation. the v batt tracking circuit eliminates the need to monitor battery voltage, thereby minimizing switching transients. the RF3166 requires no external routing or external components, simplifying layout and reducing board space. ? ultra-small 6mmx6mm package size ? integrated v reg ? complete power control solution ? automatic v batt tracking circuit ? no external components or routing ? improved power flatness RF3166 quad-band gsm850/gsm900/dcs/pcs power amp module RF3166 sb power amp module 5-piece sample pack RF3166pcba-410 fully assembled evaluation board RF3166asmpcba-410 fully assembled evaluation board with antenna switch module 0 rev a1 051107 shaded areas represent pin 1. dimensions in mm. 1 6.00 0.10 6.00 0.10 1.40 1.25 0.450 0.075 4.650 5.500 4.625 typ 4.450 typ 5.200 typ 3.850 typ 3.675 typ 3.075 typ 2.125 typ 1.525 typ 1.350 typ 0.800 typ 0.600 typ 0.500 typ 0.000 2.850 0.565 typ 0.750 typ 1.300 1.365 1.700 2.100 2.600 3.000 3.065 3.400 3.800 4.200 4.600 4.300 0.565 typ 0.100 typ 5.823 5.500 typ 5.435 typ 5.100 5.057 5.035 1 2.600 typ 1.750 typ 1.225 typ 1.150 typ 0.965 5.225 typ 5.400 typ 2.900 typ 2.300 typ 5.900 typ 2.000 typ 1.150 typ 0.565 typ 0.000 typ 0.100 typ 0.900 typ 5.900 typ 5.435 5.370 package style: module, 6mm x6mm 9 9 .com .com .com 4 .com u datasheet
2-492 RF3166 rev a1 051107 absolute maximum ratings parameter rating unit supply voltage -0.3 to +6.0 v dc power control voltage (v ramp ) -0.3 to +2.2 v input rf power +10 dbm max duty cycle 50 % output load vswr 10:1 operating case temperature -20 to +85 c storage temperature -55 to +150 c parameter specification unit condition min. typ. max. overall power control v ramp power control ?on? 2.1 v max. p out , voltage supplied to the input power control ?off? 0.26 v min. p out , voltage supplied to the input v ramp input capacitance 2 20 pf dc to 2mhz v ramp input current 30 av ramp =2.1v tx enable ?on? 1.5 v tx enable ?off? 0.5 v gsm band enable 0.5 v dcs/pcs band enable 1.5 v overall power supply power supply voltage 3.5 v specifications 3.0 4.5 v nominal operating limits power supply current 1 ap in <-30dbm, tx enable=low, temp=-20c to +85c 150 ma v ramp =0.26v, tx enable=high overall control signals band select ?low? 0 0 0.5 v band select ?high? 1.5 2.0 3.0 v band select ?high? current 20 50 a tx enable ?low? 0 0 0.5 v tx enable ?high? 1.5 2.0 3.0 v tx enable ?high? current 1 2 a caution! esd sensitive device. rf micro devices believes the furnished information is correct and accurate at the time of this printing. however, rf micro devices reserves the right to make changes to its products without notice. rf micro devices does not assume responsibility for the use of the described product(s). .com .com .com .com 4 .com u datasheet
2-493 RF3166 rev a1 051107 parameter specification unit condition min. typ. max. overall (gsm850 mode) te m p = + 2 5 c, v batt =3.5v, v ramp =2.1v, p in =3dbm, freq=824mhz to 849mhz, 25% duty cycle, pulse width=1154 s operating frequency range 824 to 849 mhz maximum output power 1 34.2 dbm temp=+25c, v batt =3.5v, v ramp =2.1v maximum output power 2 32.0 dbm temp=+85c, v batt =3.0v, v ramp =2.1v total efficiency 45 52 % at p out max , v batt =3.5v input power range 0 +3 +5 dbm maximum output power guaranteed at mini- mum drive level output noise power -85 -83 dbm rbw=100khz, 869mhz to 894mhz, p out < +34.2dbm forward isolation 1 -45 -30 dbm txenable=low, p in =+5dbm forward isolation 2 -30 -10 dbm txenable=high, p in =+5dbm, v ramp =0.26v cross band isolation at 2f 0 -30 -20 dbm v ramp =0.26v to v ramp _r p second harmonic -15 -10 dbm v ramp =0.26v to v ramp _r p third harmonic -30 -15 dbm v ramp =0.26v to v ramp _r p all other non-harmonic spurious -36 dbm v ramp =0.26v to 2.1v input impedance 50 input vswr 2.5:1 output load vswr stability 8:1 spurious<-36dbm, rbw=3mhz set v ramp where p out < 34.2dbm into 50 load output load vswr ruggedness 10:1 set v ramp where p out < 34.2dbm into 50 load. no damage or permanent degradation to part. output load impedance 50 load impedance presented at rf out pad power control v ramp power control range 50 55 db v ramp =0.26v to 2.1v transient spectrum -35 dbm v ramp =v ramp _r p transient spectrum under extreme conditions -23 dbm temp=-20c to +85c, v batt > 3.0v. ramping shape same as for condition: te m p = 2 5 c, v batt =3.5v, v ramp =v ramp _r p power degradation from nominal conditions v batt =3.0v to 4.5v, temp=-20c to +85c, p in =0dbm to 5dbm, relative to output power for condition: v batt =3.5v, p in =+3dbm, temp=25c, freq = 836.5 mhz. output power variation measured at set v ramp . 5dbm to 14dbm -4 +4 db 14dbm to 32dbm -2 +2 db notes: v ramp _r p =v ramp set for 34.2dbm at nominal conditions. .com .com .com .com 4 .com u datasheet
2-494 RF3166 rev a1 051107 parameter specification unit condition min. typ. max. overall (gsm900 mode) te m p = + 2 5 c, v batt =3.5v, v ramp =2.1v, p in =3dbm, freq=880mhz to 915mhz, 25% duty cycle, pulse width=1154 s operating frequency range 880 to 915 mhz maximum output power 1 34.2 dbm temp=+25c, v batt =3.5v, v ramp =2.1v maximum output power 2 32.0 dbm temp=+85c, v batt =3.0v, v ramp =2.1v total efficiency 51 56 % at p out max , v batt =3.5v input power range 0 +3 +5 dbm maximum output power guaranteed at mini- mum drive level output noise power -83 -80 dbm rbw=100khz, 925mhz to 935mhz, p out < +34.2dbm -85 -83 dbm rbw=100khz, 935mhz to 960mhz, p out < +34.2dbm forward isolation 1 -40 -30 dbm txenable=low, p in =+5dbm forward isolation 2 -30 -10 dbm txenable=high, p in =+5dbm, v ramp =0.26v cross band isolation 2f 0 -30 -20 dbm v ramp =0.26v to v ramp _r p second harmonic -15 -10 dbm v ramp =0.26v to v ramp _r p third harmonic -30 -15 dbm v ramp =0.26v to v ramp _r p all other non-harmonic spurious -36 dbm v ramp =0.26v to 2.1v input impedance 50 input vswr 2.5:1 output load vswr stability 8:1 spurious<-36dbm, rbw=3mhz set v ramp where p out < 34.2dbm into 50 load output load vswr ruggedness 10:1 set v ramp where p out < 34.2dbm into 50 load. no damage or permanent degradation to part. output load impedance 50 load impedance presented at rf out pad power control v ramp power control range 50 55 db v ramp =0.26v to 2.1v transient spectrum -35 dbm v ramp =v ramp _r p transient spectrum under extreme conditions -23 dbm temp=-20c to +85c, v batt > 3.0v. ramping shape same as for condition: te m p = 2 5 c, v batt =3.5v, v ramp =v ramp _r p power degradation from nominal conditions v batt =3.0v to 4.5v, temp=-20c to +85c, p in =0dbm to 5dbm, relative to output power for condition: v batt =3.5v, p in =+3dbm, temp=25c, freq = 897.5 mhz. output power variation measured at set v ramp . 5dbm to 14dbm -4 +4 db 14dbm to 32dbm -2 +2 db notes: v ramp _r p =v ramp set for 34.2dbm at nominal conditions. .com .com .com .com 4 .com u datasheet
2-495 RF3166 rev a1 051107 parameter specification unit condition min. typ. max. overall (dcs mode) te m p = 2 5 c, v batt =3.5v, v ramp =2.1v, p in =3dbm, freq=1710mhz to 1785mhz, 25% duty cycle, pulse width=1154 s operating frequency range 1710 to 1785 mhz maximum output power 1 32.0 dbm temp=+25c, v batt =3.5v, v ramp =2.1v maximum output power 2 30.0 dbm temp=+85c, v batt =3.0v, v ramp =2.1v total efficiency 46 52 % at p out max, v batt =3.5v input power range 0 +3 +5 dbm maximum output power guaranteed at mini- mum drive level output noise power -85 -80 dbm rbw=100khz, 1805mhz to 1880mhz, p out < 32dbm forward isolation 1 -40 -30 dbm txenable=low, p in =+5dbm forward isolation 2 -25 -10 dbm txenable=high, v ramp =0.26v, p in =+5dbm second harmonic -15 -10 dbm v ramp =0.26v to v ramp _r p third harmonic -30 -15 dbm v ramp =0.26v to v ramp _r p all other non-harmonic spurious -36 dbm v ramp =0.26v to 2.1v input impedance 50 input vswr 2.5:1 output load vswr stability 8:1 spurious<-36dbm, rbw=3mhz set v ramp where p out < 32dbm into 50 load output load vswr ruggedness 10:1 set v ramp where p out < 32dbm into 50 load. no damage or permanent degradation to part. output load impedance 50 load impedance presented at rf out pad power control v ramp power control range 45 50 db v ramp =0.26v to 2.1v transient spectrum -35 dbm v ramp =v ramp _r p transient spectrum under extreme conditions -23 dbm temp=-20c to +85c, v batt > 3.0v. ramping shape same as for condition: te m p = 2 5 c, v batt =3.5v, v ramp =v ramp _r p power degradation from nominal conditions v batt =3.0v to 4.5v, temp=-20c to +85c, p in =0dbm to 5dbm, relative to output power for condition: v batt =3.5v, p in =+3dbm, temp=25c, freq=1747.5mhz. output power variation measured at set v ramp . 0dbm to 15dbm -4 +4 db 15dbm to 30dbm -2 +2 db notes: v ramp _r p =v ramp set for 32dbm at nominal conditions. .com .com .com .com 4 .com u datasheet
2-496 RF3166 rev a1 051107 parameter specification unit condition min. typ. max. overall (pcs mode) te m p = 2 5 c, v batt =3.5v, v ramp =2.1v, p in =3dbm, freq=1850mhz to 1910mhz, 25% duty cycle, pulse width=1154 s operating frequency range 1850 to 1910 mhz maximum output power 1 32.0 dbm temp=+25c, v batt =3.5v, v ramp =2.1v maximum output power 2 30.0 dbm temp=+85c, v batt =3.0v, v ramp =2.1v total efficiency 46 52 % at p out max, v batt =3.5v input power range 0 +3 +5 dbm maximum output power guaranteed at mini- mum drive level output noise power -85 -80 dbm rbw=100khz, 1930mhz to 1990mhz, p out < 32dbm forward isolation 1 -35 -30 dbm txenable=low, p in =+5dbm forward isolation 2 -25 -10 dbm txenable=high, v ramp =0.26v, p in =+5dbm second harmonic -15 -10 dbm v ramp =0.26v to v ramp _r p third harmonic -30 -15 dbm v ramp =0.26v to v ramp _r p all other non-harmonic spurious -36 dbm v ramp =0.26v to 2.1v input impedance 50 input vswr 2.5:1 output load vswr stability 8:1 spurious<-36dbm, rbw=3mhz set v ramp where p out < 32dbm into 50 load output load vswr ruggedness 10:1 set v ramp where p out < 32dbm into 50 load. no damage or permanent degradation to part. output load impedance 50 load impedance presented at rf out pad power control v ramp power control range 45 50 db v ramp =0.26v to 2.1v transient spectrum -35 dbm v ramp =v ramp _r p transient spectrum under extreme conditions -23 dbm temp=-20c to +85c, v batt > 3.0v. ramping shape same as for condition: te m p = 2 5 c, v batt =3.5v, v ramp =v ramp _r p power degradation from nominal conditions v batt =3.0v to 4.5v, temp=-20c to +85c, p in =0dbm to 5dbm, relative to output power for condition: v batt =3.5v, p in =+3dbm, temp=25c, freq = 1880 mhz. output power variation measured at set v ramp . 0dbm to 15dbm -4 +4 db 15dbm to 30dbm -2 +2 db notes: v ramp _r p =v ramp set for 32dbm at nominal conditions. .com .com .com .com 4 .com u datasheet
2-497 RF3166 rev a1 051107 pin function description interface schematic 1 dcs/pcs in rf input to the dcs band. this is a 50 input. 2 band select allows external control to select the gsm or dcs band with a logic high or low. a logic low enables the gsm band whereas a logic high enables the dcs band. 3 tx enable this signal enables the pa module for operation with a logic high. 4vbatt power supply for the module. this should be connected to the battery. 5gnd 6 vramp ramping signal from dac. a 300khz lowpass filter is integrated into the cmos. no external filtering is required. 7 gsm in rf input to the gsm band. this is a 50 input. 8gsm out rf output for the gsm band. this is a 50 output. the output load line matching is contained internal to the package. 9 dcs/pcs out rf output for the dcs band. this is a 50 output. the output load line matching is contained internal to the package. pkg base gnd gsm ctrl dcs ctrl band sel tx en tx en vbatt tx on vramp 300 khz .com .com .com .com 4 .com u datasheet
2-498 RF3166 rev a1 051107 pin out to p d o w n v i e w dcs/pcs rfin band select tx enable vbatt gnd vramp gsm rf in dcs/pcs rfout gsm rfout 9 1 3 2 8 6 5 4 7 .com .com .com .com 4 .com u datasheet
2-499 RF3166 rev a1 051107 application schematic evaluation board schematic 50 ? strip 50 ? strip 50 ? strip 50 ? strip dcs/pcs in band select tx enable vbatt vramp gsm in dcs/pcs out gsm out 9 1 3 2 6 5 4 8 7 50 strip 50 strip 50 strip 50 strip band select tx enable vbatt vramp 22 f* notes: * the value of the vbatt decoupling capacitor depends on the noise level of the phone board. capacitor type may be either tantalum or cera mic. some applications may not require this capacitor. 1. all the pa output measurements are referenced to the pa output pad (pins 8 and 9). 2. the 50 strip between the pa output pad and the sma connector has an approximate insertion loss of 0.1 db for gsm850/egsm900 and 0.2 db for dcs1800/pcs1900 bands. gnd p1 1 con1 dcs/pcs in gsm in dcs/pcs out gsm out vcc p2 1 con1 p2-1 9 1 3 2 6 5 4 8 7 .com .com .com .com 4 .com u datasheet
2-500 RF3166 rev a1 051107 evaluation board layout board size 2.0? x 2.0? board thickness 0.032?, board material fr-4, multi-layer .com .com .com .com 4 .com u datasheet
2-501 RF3166 rev a1 051107 theory of operation overview the RF3166 is a quad-band gsm850, egsm900, dcs1800, and pcs1900 power amplifier module that incorporates an indirect closed loop method of power control. this simplifies the phone design by eliminating the need for the compli- cated control loop design. the indirect closed loop appears as an open loop to the user and can be driven directly from the dac output in the baseband circuit. theory of operation the indirect closed loop is essentially a closed loop method of power control that is invisible to the user. most power con- trol systems in gsm sense either forward power or collector/drain current. the RF3166 does not use a power detector. a high-speed control loop is incorporated to regulate the collector voltage of the amplifier while the stage are held at a con- stant bias. the v ramp signal is multiplied by a factor of 2.3 and the collector voltage for all three stages is regulated to the multiplied v ramp voltage. the basic circuit is shown in the following diagram. by regulating the power, the stages are held in saturation across all power levels. as the required output power is decreased from full power down to 0dbm, the collector voltage is also decreased. this regulation of output power is demonstrated in equation 1 where the relationship between collector voltage and output power is shown. although load impedance affects output power, supply fluctuations are the dominate mode of power variations. with the RF3166 regu- lating collector voltage, the dominant mode of power fluctuations is eliminated. (eq. 1) there are several key factors to consider in the implementation of a transmitter solution for a mobile phone. some of them are: ? current draw and system efficiency ? power variation due to supply voltage ? power variation due to frequency ? power variation due to temperature ? input impedance variation ? noise power ? loop stability ? loop bandwidth variations across power levels ? burst timing and transient spectrum trade offs ? harmonics v ramp 3 db bw 300 khz - + - + h(s) v batt saturation detector rf in rf out tx enable p dbm 10 2 v cc v sat ? ? () 2 8 r load 10 3 ? ?? ------------------------------------------- log ? = .com .com .com .com 4 .com u datasheet
2-502 RF3166 rev a1 051107 output power does not vary due to supply voltage under normal operating conditions if v ramp is sufficiently lower than v batt . by regulating the collector voltage to the pa the voltag e sensitivity is essentially eliminated. this covers most cases where the pa will be operated. ho wever, as the battery discharges and approaches its lower power range the maximum output power from the pa will also drop slight ly. in this case it is im portant to also decrease v ramp to prevent the power control from inducing switching transients. these tr ansients occur as a result of the control loop slowing down and not regulating power in accordance with v ramp . the switching transients due to low battery conditions are regulated by the v batt tracking circuit. the v batt tracking cir- cuit consists of a feedback loop that detects fet saturation. as the fet approaches saturation, the limiter adjusts the v ramp voltage in order to ensure minimum switching transients. the v batt tracking circuit is integrated into the cmos controller and requires no additional input from the user. due to reactive output matches, there are output power variations across frequency. there are a number of components that can make the effects greater or less. power variation straight out of the RF3166 is shown in the tables below. the components following the power amplifier often have insertion loss variation with respect to frequency. usually, there is some length of microstrip that follows the power amplifier. there is also a frequency response found in directional cou- plers due to variation in the coupling factor over frequency, as well as the sensitivity of the detector diode. since the RF3166 does not use a directional coupler with a diode detector, these variations do not occur. input impedance variation is found in most gsm power amplifiers. this is due to a device phenomena where c be and c cb (c gs and c sg for a fet) vary over the bias voltage. the same principle used to make varactors is present in the power amplifiers. the junction capacitance is a function of the bias across the junction. this produces input impedance variations as the vapc voltage is swep t. although this could pr esent a problem with freque ncy pulling the transmit vco off frequency, most synthesizer designers use very wide loop bandwidths to quickly compensate for frequency variations due to the load variations presented to the vco. the RF3166 presents a very constant load to the vco. this is because all stages of the RF3166 are run at constant bias. as a result, there is constant reactance at the base emitter and base collector junction of the input stage to the power amplifier. noise power in pa's where output power is controlled by changing the bias voltage is often a problem when backing off of output power. the reason is that the gain is changed in all stages and according to the noise formula (equation 2), (eq. 2) the noise figure depends on noise factor and gain in all stages. because the bias point of the RF3166 is kept constant the gain in the first stage is always high and the overall noise power is not increased when decreasing output power. power control loop stability ofte n presents many challe nges to transmitter de sign. designing a prop er power control loop involves trade-offs affecting stability, transient spectrum and burst timing. in conventional architectures the pa gain (db/ v) varies across different power levels, and as a result the loop bandwidth also varies. with some power amplifiers it is possible for the pa gain (control slope) to change from 100db/v to as high as 1000db/v. the challenge in this scenario is keeping the loop bandwidth wide enough to meet the burst mask at low slope regions which often causes instability at high slope regions. the RF3166 loop bandwidth is determined by internal bandwidth and the rf output load and does not change with respect to power levels. this makes it easier to maintain loop stability with a high bandwidth loop since the bias voltage and collector voltage do not vary. f tot f 1 f 21 ? g 1 --------------- - f 31 ? g 1 g 2 ? ------------------- ++ = .com .com .com .com 4 .com u datasheet
2-503 RF3166 rev a1 051107 an often overlooked prob lem in pa control loops is that a delay not only decreases loop st ability it also affects the burst timing when, for instance the input power from the vco decreases (or increases) with respect to temperature or supply voltage. the burst timing then appears to shift to the right especially at low power levels. the RF3166 is insensitive to a change in input power and the burst timing is constant and requires no software compensation. switching transients occur when the up and down ramp of the burst is not smooth enough or suddenly changes shape. if the control slope of a pa has an inflection point within the output power range or if the slope is simply too steep it is diffi - cult to prevent switching transients. cont rolling the output power by changing the collector volt age is as earlier described based on the physical relationship between voltage swing and output power. furthermore all stages are kept constantly biased so inflection points are nonexistent. harmonics are natural products of high efficiency power amp lifier design. an ideal class ?e? saturated power amplifier will produce a perfect square wave. looki ng at the fourier transform of a square wave reveals high harmonic content. although this is common to all power amplifiers, there are ot her factors that contribute to conducted harmonic content as well. with most power control methods a peak power diode detector is used to rectify and sense forward power. through the rectification process there is additional squaring of the waveform resulting in higher harmonics. the RF3166 address this by eliminating the need for the detector diode. therefore the harmonics coming out of the pa should represent the maximum power of the harmonics throughout the transmit chain. this is based upon proper harmonic termination of the transmit port. the receive port termination on the t/r switch as well as the harmonic impedance from the switch itself will have an impact on harmonics. should a prob lem arise, these terminat ions should be explored. .com .com .com .com 4 .com u datasheet
2-504 RF3166 rev a1 051107 pcb design requirements pcb surface finish the pcb surface finish used for rfmd?s qualification process is electroless nickel, immersion gold. typical thickness is 3 inch to 8 inch gold over 180 inch nickel. pcb land pattern recommendation pcb land patterns are based on ipc-sm-782 standards when possible. the pad pattern shown has been developed and tested for optimized assembly at rfmd; however, it may require some modifications to address company specific assembly processes. the pcb land pattern has been developed to accommodate lead and package tolerances. pcb metal land pattern pcb solder mask pattern liquid photo-imageable (lpi) solder mask is recommended. th e solder mask footprint will match what is shown for the pcb metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. the center-grounding pad shall also have a solder mask clearance. expansion of the pads to create solder mask clearance can be provided in the master data or requested from the pcb fabrication supplier. thermal pad and via design thermal vias are required in the pcb layout to effectively conduct heat away from the package. the via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. the via pattern used for the rfmd qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. if micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. dimensions in mm. metal land pattern a = 0.40 sq. typ. b = 0.80 x 0.40 typ. c = 0.40 x 0.80 5.20 4.10 2.50 3.30 1.80 1.40 0.80 0.00 0.00 0.50 4.90 5.40 0.60 0.20 4.90 5.40 5.60 5.60 pin 1 c a a b a a a b 5.20 4.47 0.37 0.93 solder mask pattern a = 0.55 x 0.95 b = 0.55 sq. typ. c = 0.95 x 0.55 typ. d = 1.80 x 4.62 e = 0.60 sq. typ. pin 1 d a b b c b b b c b b b b b b b e e e e e e e e e e e e e e e 5.40 4.62 3.85 3.07 2.76 2.30 1.52 0.75 5.40 4.25 3.40 1.95 0.00 0.00 0.80 1.60 2.50 3.30 4.10 5.20 typ figure 1. pcb metal land and so lder mask patterns (top view) .com .com .com 4 .com u datasheet

▲Up To Search▲

Price & Availability of RF3166

	To Download RF3166 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .